Course Detail
Course Components:
This course covers both the theory and practical use of modern electron microscopy for semiconductor materials and devices. It assumes basic knowledge of semiconductors, but much of the necessary material will be covered. The course begins with the principle of electron microscopy, proceed to the description of conventional and advanced modern technique, and evaluate the advantages and disadvantages of each method. Metrologies for semiconductors devices are then introduced, including energy-dispersive X-ray spectroscopy (EDX), electron beam induced current (EBIC), and cathodoluminescence (CL), to study active defects, junction interfaces, and excess carrier dynamics of the devices. About 30 % of the class time will be held in labs for demos and system operation sessions. Extra work (e.g., simulations) is required of those who registered in the 6000 level.