Course Detail
Units:
2.0
Course Components:
Lecture
Enrollment Information
Enrollment Requirement:
Prerequisite: EL EN 6261 or both 5201 and 5202.
Description
A lecture/laboratory course focusing on advanced principles of operation, physical design considerations, and testing of advanced Si, SiGe, SiC, and III-V compound semiconductor devices. Ohmic and Schottky contact technologies will be discussed in detail. Advanced applications of MESFETs and JFETs will also be presented. The primary thrust of this course will be on HEMTs, HBTs, MBTs, graded junction/alloy transistors, resonant tunneling transistors and other quantum and superlattice devices. Trade-offs, theoretical considerations, modeling and simulation, testing, and the correlation between theory and experiment for various device parameters will be covered.